| 摘要 |
An integrated circuit includes a support (1), at least three metal layers above the support, the metal layers having a top metal layer with a top plate (33) and a bottom metal layer with a bottom plate (25), dielectric material (31) between the top and bottom plates to form a capacitor (2), and plural oxide layers (9, 11, 13, 15) above the support, such oxide layers including a top oxide layer (27), each oxide layer respectively covering a corresponding metal layer. The top oxide layer covers the top metal layer and has an opening exposing at least part of the top plate. A method of forming the integrated circuit comprises the steps of providing a support with metal and oxide layers, including a bottom plate, forming a cavity exposing the bottom plate, filling the cavity with dielectric, applying a further metal layer having a top plate and a further oxide layer, and forming an opening to expose the top plate. |
