TRANSISTOR COMPRISING FILL AREAS IN THE SOURCE AND/OR DRAIN REGION

摘要

A transistor contains a source region and a drain region. Two or more fill areas are formed such that the fill areas and the source and/or drain region engage in one another. The fill areas have vertical dimensions which are at least of equal size to the vertical dimensions of the source and/or of the drain region. The fill areas and the source and/or drain region extend at least partially over a common vertical section. The fill areas are formed from an oxide and/or a nitride.