发明名称 |
DEBRIS REMOVAL FROM A TRENCH FORMED ON A PHOTOLITHOGRAPHIC MASK |
摘要 |
A method for removing debris from a trench formed on a photolithographic mask, comprising:
positioning a tip within the trench, the tip including a surface and a nanometer-scaled coating disposed thereon, the nanometer-scaled coating having a surface energy lower than a surface energy of the photolithographic mask;
moving the tip within the trench to physically adhere debris to the tip;
moving the tip with the debris away from the trench; and removing the debris from the tip. |
申请公布号 |
EP3147937(A1) |
申请公布日期 |
2017.03.29 |
申请号 |
EP20160178942 |
申请日期 |
2008.09.16 |
申请人 |
Rave LLC |
发明人 |
Robinson, Tod Evan;Arruza, Bernabe J.;Roessler, Kenneth Gilbert |
分类号 |
H01L21/304;B03C7/00;B08B1/00;B08B7/00;G03F1/82;G03F7/20 |
主分类号 |
H01L21/304 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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