发明名称 DEBRIS REMOVAL FROM A TRENCH FORMED ON A PHOTOLITHOGRAPHIC MASK
摘要 A method for removing debris from a trench formed on a photolithographic mask, comprising: positioning a tip within the trench, the tip including a surface and a nanometer-scaled coating disposed thereon, the nanometer-scaled coating having a surface energy lower than a surface energy of the photolithographic mask; moving the tip within the trench to physically adhere debris to the tip; moving the tip with the debris away from the trench; and removing the debris from the tip.
申请公布号 EP3147937(A1) 申请公布日期 2017.03.29
申请号 EP20160178942 申请日期 2008.09.16
申请人 Rave LLC 发明人 Robinson, Tod Evan;Arruza, Bernabe J.;Roessler, Kenneth Gilbert
分类号 H01L21/304;B03C7/00;B08B1/00;B08B7/00;G03F1/82;G03F7/20 主分类号 H01L21/304
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