Tunneling field-effect transistor including graphene channel

摘要

According to example embodiments, a tunneling field-effect transistor (TFET) includes a first electrode on a substrate, a semiconductor layer on a portion of the first electrode, a graphene channel on the semiconductor layer, a second electrode on the graphene channel, a gate insulating layer on the graphene channel, and a gate electrode on the gate insulating layer. The first electrode may include a portion that is adjacent to the first area of the substrate. The semiconductor layer may be between the graphene channel and the portion of the first electrode. The graphene channel may extend beyond an edge of at least one of the semiconductor layer and the portion of the first electrode to over the first area of the substrate.