Radio-frequency device package and method for fabricating the same

摘要

An electronic device package has a base and an electronic device chip mounted on the base. The electronic device chip includes a semiconductor substrate having a front side and a back side, a electronic component disposed on the front side of the semiconductor substrate, an interconnect structure disposed on the electronic component, a through hole formed through the semiconductor substrate from the back side of the semiconductor substrate, connecting to the interconnect structure, and a TSV structure disposed in the through hole. The interconnect structure is electrically connected to the RF component, and a thickness of the semiconductor substrate is less than that of the interconnect structure.

主权项

1. An electronic device package, comprising:
a base; and an electronic device chip mounted on the base, wherein the electronic device chip comprises: a semiconductor substrate having a front side and a back side; an electronic component disposed on the front side of the semiconductor substrate; an interconnect structure disposed on the electronic component, wherein the interconnect structure is electrically connected to the electronic component, and a thickness of the semiconductor substrate is less than that of the interconnect structure, the interconnect structure further comprising a dielectric layer in direct contact with the substrate and in direct contact with the electronic component, and plural metal layers, wherein the dielectric layer is disposed above the front side of the semiconductor substrate; a through hole formed through the semiconductor substrate from the back side of the semiconductor substrate, connecting to the interconnect structure; a TSV structure disposed in the through hole, the TSV structure comprising a conductive via plug disposed in the through hole and having a first surface and an opposing second surface, the first and second surfaces respectively coplanar with opposing ends of the through hole, the TSV structure extending through the dielectric layer such that the first surface is in direct contact with one of the plural metal layers and the second surface is coplanar with the back side; and a conductive bump disposed on an end of the TSV structure in close proximity to the back side of the semiconductor substrate, so as to be connected to the base that is disposed over the back side of the semiconductor substrate.