Display device

摘要

An object is to provide a semiconductor device having a structure with which parasitic capacitance between wirings can be sufficiently reduced. An oxide insulating layer serving as a channel protective layer is formed over part of an oxide semiconductor layer overlapping with a gate electrode layer. In the same step as formation of the oxide insulating layer, an oxide insulating layer covering a peripheral portion of the oxide semiconductor layer is formed. The oxide insulating layer which covers the peripheral portion of the oxide semiconductor layer is provided to increase the distance between the gate electrode layer and a wiring layer formed above or in the periphery of the gate electrode layer, whereby parasitic capacitance is reduced.

主权项

1. A display device comprising:
a driver circuit and a pixel portion, wherein the driver circuit includes:
a first conductive layer;a first insulating layer over the first conductive layer;a first semiconductor layer over the first insulating layer, the first semiconductor layer overlapping with the first conductive layer;a second insulating layer over the first semiconductor layer, the second insulating layer including a first contact hole and a second contact hole, wherein the second insulating layer covers a periphery of the first semiconductor layer;a second conductive layer over the second insulating layer, the second conductive layer electrically connected to the first semiconductor layer through the first contact hole;a third conductive layer over the second insulating layer, the third conductive layer electrically connected to the first semiconductor layer through the second contact hole; anda fourth conductive layer over the second insulating layer, the fourth conductive layer overlapping with the first semiconductor layer, wherein the pixel portion includes:
a fifth conductive layer;a third insulating layer over the fifth conductive layer;a second semiconductor layer over the third insulating layer, the second semiconductor layer overlapping with the fifth conductive layer;a fourth insulating layer over the second semiconductor layer, the fourth insulating layer including a third contact hole and a fourth contact hole, wherein the fourth insulating layer covers a periphery of the second semiconductor layer;a sixth conductive layer over the fourth insulating layer, the sixth conductive layer electrically connected to the second semiconductor layer through the third contact hole; anda seventh conductive layer over the fourth insulating layer, the seventh conductive layer electrically connected to the second semiconductor layer through the fourth contact hole, wherein the fourth conductive layer is electrically connected to the first conductive layer, and wherein the fourth conductive layer is a same material with the seventh conductive layer.