发明名称 |
Method for selecting polycrystalline silicon rod, and method for producing single crystalline silicon |
摘要 |
Plate-like samples each having as a principal plane thereof a cross section perpendicular to the long axis direction of a polycrystalline silicon rod grown by the deposition using a chemical vapor deposition method are sampled; an X-ray diffraction measurement is performed omnidirectionally in the plane of each of the plate-like samples thus sampled; and when none of the plate-like samples has any X-ray diffraction peak with a diffraction intensity deviating from the average value ±2×standard deviation (μ±2σ) found for any one of the Miller indices <111>, <220>, <311> and <400>, the polycrystalline silicon rod is selected as the raw material for use in the production of single-crystalline silicon. The use of such a polycrystalline silicon raw material suppresses the local occurrence of the portions remaining unmelted, and can contribute to the stable production of single-crystalline silicon. |
申请公布号 |
US9605356(B2) |
申请公布日期 |
2017.03.28 |
申请号 |
US201214111597 |
申请日期 |
2012.04.04 |
申请人 |
Shin-Etsu Chemical Co., Ltd. |
发明人 |
Miyao Shuichi;Okada Junichi;Netsu Shigeyoshi |
分类号 |
C30B13/00;C30B29/06;C01B33/035;C30B35/00;C30B15/00;G01N23/207 |
主分类号 |
C30B13/00 |
代理机构 |
Oblon, McClelland, Maier & Neustadt, L.L.P. |
代理人 |
Oblon, McClelland, Maier & Neustadt, L.L.P. |
主权项 |
1. A method for selecting a polycrystalline silicon rod, the method comprising:
obtaining one or more plate-like samples from a polycrystalline silicon rod grown by a chemical vapor deposition process, each of the one or more plate-like samples having a cross section perpendicular to a long axis direction of the polycrystalline silicon rod, wherein the cross section is a principal plane of each of the one or more plate-like samples; performing an X-ray diffraction measurement omnidirectionally in the principal plane of each of the one or more plate-like samples; and selecting the polycrystalline silicon rod as suitable for use in the production of single-crystalline silicon when none of the plate-like samples has any X-ray diffraction peak with a diffraction intensity deviating from an average value ±2×standard deviation found for any one of the Miller indices <111>, <220>, <311> and <400>. |
地址 |
Tokyo JP |