| 主权项 |
1. A method comprising;
providing a wafer comprising a semiconductor structure grown on a growth substrate, the semiconductor structure comprising a light emitting layer disposed between an n-type region and a p-type region, the wafer comprising trenches defining individual semiconductor devices, wherein the trenches extend through an entire thickness of the semiconductor structure to reveal the growth substrate, and wherein each individual semiconductor device comprises an n-contact connected to the n-type region and a p-contact connected to the p-type region, wherein the n- and p-contacts are formed on a same side of the semiconductor structure and wherein the n-contact surrounds the p-contact; forming a thick conductive layer on the semiconductor structure, wherein the thick conductive layer is configured to support the semiconductor structure when the growth substrate is removed; attaching the wafer to temporary wafer handling tape; and removing the growth substrate, wherein immediately prior to removing the growth substrate, neighboring semiconductor devices are connected only through the growth substrate and through the temporary wafer handling tape; wherein the thick conductive layer is a first thick conductive layer, the method further comprising forming a second thick conductive layer on the semiconductor structure, wherein the first thick conductive layer surrounds the second thick conductive layer, and the first and second thick conductive layers are separated by an insulating layer. |
