发明名称 |
Au—Ga—In brazing material |
摘要 |
A brazing material which can be melted at a suitable temperature at which damage is not given to a device inside a package upon sealing, and besides the brazing material is not remelted, e.g., upon mounting to a board, and which has a low temperature difference between a liquidus and a solidus. The brazing material is made of a Au—Ga—In ternary alloy, wherein weight concentrations of the elements lie within a region of a polygon with a point A (Au: 90%, Ga: 10%, In: 0%), a point B (Au: 70%, Ga: 30%, In: 0%), a point C (Au: 60%, Ga: 0%, In: 40%) and a point D (Au: 80%, Ga: 0%, In: 20%) as vertexes (excluding lines on which In and Ga become 0%), in a Au—Ga—In ternary phase diagram. |
申请公布号 |
US9604317(B2) |
申请公布日期 |
2017.03.28 |
申请号 |
US201414460904 |
申请日期 |
2014.08.15 |
申请人 |
TANAKA KIKINZOKU KOGYO K.K. |
发明人 |
Taniguchi Hiroyasu;Shimada Tomohiro;Miyazaki Kenichi |
分类号 |
C22C5/02;B23K35/30;B23K35/02;H01L23/10 |
主分类号 |
C22C5/02 |
代理机构 |
Roberts & Roberts, LLP |
代理人 |
Roberts & Roberts, LLP |
主权项 |
1. A sealing method comprising brazing components with a brazing material, which brazing material comprises a Au—Ga—In ternary alloy, wherein weight concentrations of the elements lie within a region of a polygon with a point A (Au: 90%, Ga: 10%, In: 0%), a point B (Au: 70%, Ga: 30%, In: 0%), a point C (Au: 60%, Ga: 0%, In: 40%) and a point D (Au: 80%, Ga: 0%, In: 20%) as vertexes, excluding lines on which In and Ga become 0%, in a Au—Ga—In ternary phase diagram. |
地址 |
Tokyo JP |