发明名称 |
Laser diodes with an etched facet and surface treatment |
摘要 |
A gallium- and nitrogen-containing laser device including an etched facet with surface treatment to improve an optical beam is disclosed. |
申请公布号 |
US9608407(B1) |
申请公布日期 |
2017.03.28 |
申请号 |
US201514878387 |
申请日期 |
2015.10.08 |
申请人 |
SORAA LASER DIODE, INC. |
发明人 |
Raring James W.;Schmidt Mathew C.;Ellis Bryan |
分类号 |
H01S5/00;H01S5/10;H01S5/323;H01S5/343;H01S5/22 |
主分类号 |
H01S5/00 |
代理机构 |
Kilpatrick Townsend & Stockton, LLP |
代理人 |
Kilpatrick Townsend & Stockton, LLP |
主权项 |
1. A method for manufacturing a laser diode device, the method comprising:
providing a gallium and nitrogen containing substrate, the substrate comprising a surface region; forming an n-type cladding region overlying the surface region; forming an active region comprising at least one active layer region overlying the n-type cladding region, the active region comprising a quantum well region or a double hetero-structure region; forming a p-type cladding region overlying the active region; forming, using an etching process, a laser stripe region overlying a portion of the surface region, the laser stripe region comprising a first end configured on one side of the laser stripe region and a second end configured on another side of the laser stripe region, a first etched facet provided on the first end of the laser stripe region, and a second etched facet formed on the second end of the laser stripe region, a laser stripe length characterizing a spatial distance between the first etched facet and the second etched facet; forming a first edge region configured within a vicinity of the first etched facet such that a first spatial off-set is provided between the first edge region and first etched facet, and the first spatial off-set is configured in a direction normal to a surface of the first etched facet, wherein the first etched facet includes a first portion of the n-type cladding region and the first edge region includes a second portion of the n-type cladding region; forming a second edge region configured within a vicinity of the second facet; and performing a first treatment process overlying a portion of the first edge region. |
地址 |
Goleta CA US |