发明名称 Method for integrating a synthetic hologram in a halftone image
摘要 A method for integrating a synthetic hologram in an image of a scene, including: forming, from a first image of the scene, a first matrix including pixels of two shades according to the gray level of the corresponding pixel of the first image, and a second matrix, image of the gray level difference between the corresponding pixels of the first image and of the first matrix; forming a third matrix based on a second image; forming a fourth matrix having each pixel including a central area with a surface area determined by the corresponding element of the second matrix and off-centered in the pixel according to the corresponding pixel of the third matrix; and performing a lithography of an opaque layer at the surface of a plate according to the pattern defined by the fourth pixel matrix.
申请公布号 US9606507(B2) 申请公布日期 2017.03.28
申请号 US201213687268 申请日期 2012.11.28
申请人 Commissariat a l'energie atomique et aux energies alternatives 发明人 Martinez Christophe
分类号 G03H1/08;G03H1/00 主分类号 G03H1/08
代理机构 Kaplan Breyer Schwarz & Ottesen, LLP 代理人 Kaplan Breyer Schwarz & Ottesen, LLP
主权项 1. A method for integrating a synthetic hologram in a directly observable image of a scene, comprising the steps of: defining a first source image of said scene, comprising grayscale pixels; forming first and second pixel matrixes from the first source image, the first matrix comprising pixels of a first and of a second shade according to whether a corresponding pixel of the first source image has a gray level greater than or smaller than a gray level threshold, each element of the second matrix comprising a value equal to a gray level difference between the corresponding pixel of the first source image and a corresponding pixel of the first matrix; forming a third pixel matrix by calculating a phase image of a synthetic hologram obtained by a Fourier transform of an image originating from a second source image of the hologram; forming a fourth pixel matrix, each pixel of the fourth matrix comprising an area internal to the pixel having its surface area determined based on a value of a corresponding pixel of the second matrix and off-centered in the pixel according to a value of a corresponding pixel of the third matrix; and performing a lithography of an opaque layer at the surface of a wafer according to a pattern defined by the fourth pixel matrix, the pattern comprising the value of the corresponding pixel of the second matrix and the value of the corresponding pixel of the third matrix, the lithography being provided to remove, from a pixel, the opaque layer inside of the internal area if the equivalent pixel of the first matrix is of the first shade and to remove the opaque layer outside of the central internal area if the equivalent pixel of the first matrix is of the second shade.
地址 FR