Apparatus and operation method thereof

摘要

An apparatus includes a body and a surface for receiving a semiconductor wafer carrier is provided. A nozzle and a venting hole are provided on the surface. The semiconductor wafer carrier has at least one selectively closable capped opening at a bottom, top and/or side surface thereof. The capped opening is configured to couple to, and be accessible by, the nozzle and receive gas output from the nozzle so as to create a substantially oxygen free environment within the semiconductor wafer carrier. The vent hole is configured to allow gas to flow out of the semiconductor wafer carrier. In addition, the apparatus includes a sensor and a controller. The sensor is configured to monitor an ambient condition in the semiconductor wafer carrier, and the controller is configured to adjust a control valve based on the ambient condition so as to control the gas flow or output from the nozzle.

主权项

1. An apparatus, comprising:
a body including a surface, wherein the surface is configured to receive a semiconductor wafer carrier; a nozzle on the surface, wherein the nozzle is connected to a gas source through a gas line, and the nozzle is configured to provide a gas output from the gas source to the semiconductor wafer carrier, wherein the semiconductor wafer carrier includes a capped opening at a surface thereof, configured to couple with the nozzle to provide the gas output to the semiconductor wafer carrier so as to generate a substantially oxygen free environment within the semiconductor wafer carrier; a venting hole on the surface, wherein the venting hole is configured to allow gas flow from the semiconductor wafer carrier; a sensor within the body, wherein the sensor is configured to monitor an ambient condition in the semiconductor wafer carrier; and a controller within the body, wherein the controller is connected to the sensor and a control valve, wherein the controller is configured to receive the ambient condition detected by the sensor and adjust the control valve based on the ambient condition so as to control the gas output from the nozzle.