Recessed transistors containing ferroelectric material

摘要

Some embodiments include transistor constructions having a first insulative structure lining a recess within a base. A first conductive structure lines an interior of the first insulative structure, and a ferroelectric structure lines an interior of the first conductive structure. A second conductive structure is within a lower region of the ferroelectric structure, and the second conductive structure has an uppermost surface beneath an uppermost surface of the first conductive structure. A second insulative structure is over the second conductive structure and within the ferroelectric structure. A pair of source/drain regions are adjacent an upper region of the first insulative structure and are on opposing sides of the first insulative structure from one another.

主权项

1. A transistor construction, comprising:
an upwardly-opening container-shaped first insulative structure within a silicon-containing base; an upwardly-opening container-shaped first conductive structure nested within a lower region of the container-shaped first insulative structure; an upwardly-opening container-shaped ferroelectric structure within the first insulative structure and over the first conductive structure; a second conductive structure within a lower region of the container-shaped ferroelectric structure; the second conductive structure having an uppermost surface beneath an uppermost surface of the first conductive structure; a second insulative structure over the second conductive structure and within the container-shaped ferroelectric structure; a pair of source/drain regions adjacent an upper region of the container-shaped first insulative structure and on opposing sides of the first insulative structure from one another; channel material along an outer region of the container-shaped first insulative structure and extending from one of the source/drain regions to the other; wherein the first conductive structure comprises one or both of titanium nitride and tantalum nitride; and wherein the ferroelectric structure comprises metal oxide.