Method of manufacturing thin-film transistor substrate

摘要

Provided is a method of manufacturing a thin-film transistor substrate, the method includes forming a semiconductor pattern layer on a substrate. A first insulating film is formed on the semiconductor pattern layer. A metal pattern layer including a gate electrode and first and second alignment electrodes respectively spaced apart from two sides of the gate electrode is formed on the first insulating film. A cover layer covering the gate electrode is formed. The first and second alignment electrodes are removed. A first doping process is performed by doping the semiconductor pattern layer with a first impurity by using the cover layer as a mask. The cover layer is removed. A second doping process is performed by doping the semiconductor pattern layer with a second impurity having a lower impurity concentration than the first impurity by using the gate electrode as a mask.

主权项

1. A method of manufacturing a thin-film transistor substrate, the method comprising:
forming a semiconductor pattern layer on a substrate; forming a first insulating film on the semiconductor pattern layer; forming, on the first insulating film, a metal pattern layer comprising a gate electrode and first and second alignment electrodes respectively spaced apart from two sides of the gate electrode; forming a cover layer covering the gate electrode, and removing the first and second alignment electrodes, wherein the cover layer is formed by forming a photoresist layer on the metal pattern layer, and then exposing and developing the photoresist layer by using a first mask having a first pattern, wherein a width of the first pattern is larger than a width of the cover layer; performing a first doping process by doping the semiconductor pattern layer with a first impurity by using the cover layer as a mask; removing the cover layer; and performing a second doping process by doping the semiconductor pattern layer with a second impurity having a lower impurity concentration than the first impurity by using the gate electrode as a mask.