主权项 |
1. A high voltage device, the high voltage device comprising:
a high-voltage transistor having a first current terminal to be coupled to a high-voltage supply, a second current terminal to be coupled to a high voltage load, and a control terminal; a driver module coupled to the control terminal of the high voltage transistor device; an isolation circuit configured to provide electrical isolation to the driver module from a received control signal having a control voltage, the isolation circuit comprising: a boost circuit, wherein the boost circuit is configured to receive the control signal at a control input and output a boosted control signal having a boosted control signal voltage, wherein the boosted control signal voltage is at least five times the control signal voltage; a first capacitive isolation component formed in a printed circuit board with multiple layers, wherein the first capacitive isolation component comprises:
a first shielding dielectric layer;a first conductive element layer having a first electrically conductive element;an intermediate dielectric layer;a second conductive element layer having a second electrically conductive element;a second shielding dielectric layerwherein
the first electrically conductive element and the second electrically conductive element are electrically isolated with respect to one another by the intermediate dielectric layer and positioned relative to each other to provide a capacitive coupling between the first electrically conductive element and the second electrically conductive element,the first conductive element layer abuts the first shielding dielectric layer, and the second shielding dielectric layer abuts the second conductive element layer;the first electrically conductive element of the first capacitive isolation component is coupled to the boost circuit to receive the boosted control signal from the boost circuit,the second electrically conductive element of the first capacitive isolation component is operably coupled to a first input of the driver module to provide the boosted control signal to the driver module over the capacitive coupling, andthe driver module drives the control terminal of the high voltage transistor device according to the boosted control signal to drive the high voltage transistor device to provide a high voltage to the high voltage load, the high voltage an order of magnitude greater than the boosted control signal voltage. |