Transistor element

摘要

The present invention provides a transistor element having a laminated structure, the laminated structure comprising a sheet-like base electrode being arranged between an emitter electrode and a collector electrode; at least one p-type organic semiconductor layer being provided on each of the surface and the back sides of the base electrode; and a current transmission promotion layer being formed, on each of the surface and back sides of the base electrode, between the base electrode and the p-type organic semiconductor layer or layers provided on each of the surface and back sides of the base electrode. According to the present invention, it becomes possible to provide a transistor element (MBOT) that is, in particular, stably supplied through a simple production process, has a structure capable of being mass-produced, and has a large current modulation effect and an excellent ON/OFF ratio at a low voltage in the emitter electrode and the collector electrode.

主权项

1. A transistor element having a laminated structure, the laminated structure comprising:
an emitter electrode; a collector electrode; a sheet-like base electrode placed between the emitter electrode and the collector electrode; a plurality of p-type organic semiconductor layers, wherein each of both a top side and a bottom side of the sheet-like base electrode comprises at least one p-type organic semiconductor layer; and further a plurality of current transmission promotion layers, each of which comprises lithium fluoride,
wherein at least one current transmission promotion layer is present on both the top side and the bottom side of the sheet-like base electrode, between the sheet-like base electrode and the at least one p-type organic semiconductor layer on both the top side and the bottom side of the sheet-like base electrode, wherein the sheet-like base electrode comprises a sheet made of a material functioning as an electrode and has no discontinuous portion in the sheet.