Hybrid active-field gap extended drain MOS transistor

摘要

An integrated circuit includes an extended drain MOS transistor with parallel alternating active gap drift regions and field gap drift regions. The extended drain MOS transistor includes a gate having field plates over the field gap drift regions. The extended drain MOS transistor may be formed in a symmetric nested configuration. A process for forming an integrated circuit containing an extended drain MOS transistor provides parallel alternating active gap drift regions and field gap drift regions with a gate having field plates over the field gap drift regions.

主权项

1. A process of forming an integrated circuit, comprising:
forming an extended drain MOS transistor including: forming an extended drain in a substrate, said extended drain including a drift region with alternating field gap drift regions and active gap regions, and said drift region abuts a channel region of said extended drain MOS transistor; forming field oxide elements in said extended drain adjacent to said field gap drift regions and opposite from said channel region, such that said extended drain extends below said field oxide elements; forming a gate dielectric layer on said substrate over said channel region and said drift region; forming a gate on said gate dielectric layer over said channel region, said gate including field plates over said field gap drift regions and extending onto said field oxide elements; and forming a drain contact diffused region in said extended drain, the drain contact diffused region having a higher doping concentration than said extended drain, the drain contact diffused region abutting said active gap regions and interleaving with said field oxide elements.