Integrated conductive substrate, and electronic device employing same

摘要

Provided are an integrated conductive substrate simultaneously serving as a substrate and an electrode, and an electronic device using the same. The integrated conductive substrate includes a metal layer composed of a non-ferrous metal, which has a first surface having a first root mean square roughness, and a semiconductor layer containing a semiconductor material, which has a second surface having a second root mean square roughness and is formed on the first surface. Here, the semiconductor layer includes a semiconductor-type planarization layer formed by a solution process using at least one of the semiconductor material and a precursor of the semiconductor material to planarize the first surface of the metal layer, and the second root mean square roughness is smaller than the first root mean square roughness.

主权项

1. A conductive substrate comprising:
a metal layer comprising a non-ferrous metal, the metal layer comprising a first surface having a first root mean square roughness (Rq); a first semiconductor layer formed on the first surface of the metal layer using a liquid application process that applies liquid containing a first semiconductive material on the first surface to form the first semiconductor layer, the first semiconductor layer comprising a second surface facing away from the first surface, the second surface having a second root mean square roughness; and a second semiconductor layer formed on the second surface using a non-liquid deposition process that deposits a second semiconductive material to form the second semiconductor layer, the second semiconductor layer comprising a third surface facing away from the second surface, the third surface having a third root mean square roughness, wherein the second surface of the first semiconductor layer does not follow a morphology of the first surface due to the liquid application process of forming the first semiconductor layer, and accordingly the second root mean square roughness is substantially different from and smaller than the first root mean square roughness, whereas the third surface of the second semiconductor layer generally follows a morphology of the second surface due to the non-liquid deposition process, and accordingly the third root mean square roughness is substantially different from and smaller than the first root mean square roughness.