发明名称 |
Method of making a tandem solar cell having a germanium perovskite/germanium thin-film |
摘要 |
A method of making a germanium perovskite/crystalline germanium thin-film tandem solar cell including the steps of depositing a textured oxide buffer layer on glass, depositing a Sn—Ge film from a eutectic alloy on the buffer layer; and depositing perovskite elements on the Sn—Ge film, thus forming a perovskite layer based on the Ge from the Sn—Ge film, incorporating the Ge into the perovskite layer. |
申请公布号 |
US9608159(B2) |
申请公布日期 |
2017.03.28 |
申请号 |
US201615205418 |
申请日期 |
2016.07.08 |
申请人 |
Solar-Tectic LLC |
发明人 |
Chaudhari Ashok |
分类号 |
H01L31/18;H01L31/0236;H01L31/028;H01L31/0725;H01L51/42;H01L27/30 |
主分类号 |
H01L31/18 |
代理机构 |
Carter, Ledyard & Milburn LLP |
代理人 |
Carter, Ledyard & Milburn LLP |
主权项 |
1. A method of making a germanium perovskite/crystalline germanium thin-film tandem solar cell comprising the steps of:
depositing a textured oxide buffer layer on glass substrate, depositing a Sn—Ge film from a eutectic alloy on said buffer layer; and depositing perovskite elements on said Sn—Ge film, thus forming a perovskite layer based on said Ge from said Sn—Ge film, incorporating said Ge metal into said perovskite layer. |
地址 |
Briarcliff Manor NY US |