Method for fabrication of copper-indium gallium oxide and chalcogenide thin films

摘要

A composition of matter and method of forming copper indium gallium sulfide (CIGS), copper indium gallium selenide (CIGSe), or copper indium gallium telluride thin film via conversion of layer-by-layer (LbL) assembled Cu—In—Ga oxide (CIGO) nanoparticles and polyelectrolytes. CIGO nanoparticles are created via a flame-spray pyrolysis method using metal nitrate precursors, subsequently coated with polyallylamine (PAH), and dispersed in aqueous solution. Multilayer films are assembled by alternately dipping a substrate into a solution of either polydopamine (PDA) or polystyrenesulfonate (PSS) and then in the CIGO-PAH dispersion to fabricate films as thick as 1-2 microns. After LbL deposition, films are oxidized to remove polymer and sulfurized, selenized, or tellurinized to convert CIGO to CIGS, CIGSe, or copper indium gallium telluride.

主权项

1. A method of making copper indium gallium chalcogenide thin films, comprising:
producing copper-indium-gallium oxide (CIGO) nanoparticles via flame spray pyrolysis; binding the CIGO nanoparticles to a polyamine and dispersing the polyamine-CIGO nanoparticles in an aqueous solution to form a polyamine-CIGO dispersion; making a polyanion solution; and dipping a substrate into the polyanion solution and then the polyamine-CIGO dispersion, wherein alternate dipping between the polyanion solution and the coated CIGO dispersion may be repeated multiple times to form a CIGO film.