Ohmic contacts for semiconductor structures

摘要

A composition and method for formation of ohmic contacts on a semiconductor structure are provided. The composition includes a TiAlxNy material at least partially contiguous with the semiconductor structure. The TiAlxNy material can be TiAl3. The composition can include an aluminum material, the aluminum material being contiguous to at least part of the TiAlxNy material, such that the TiAlxNy material is between the aluminum material and the semiconductor structure. The method includes annealing the composition to form an ohmic contact on the semiconductor structure.

主权项

1. A method for formation of an ohmic contact, the method comprising:
obtaining or providing a semiconductor structure comprising an n-doped GaN; depositing TiAl3 about 50 angstroms to about 200 angstroms thick contiguous to at least part of the n-doped GaN, wherein the depositing of the TiAl3 is without annealing, and the depositing comprises at least one of atomic layer deposition, physical vapor deposition, and chemical vapor deposition; depositing aluminum about 5 angstroms to about 4000 angstroms thick contiguous to at least part of the TiAl3, such that the TiAl3 is between the aluminum and the n-doped GaN; and annealing the semiconductor structure and the TiAl3 and the aluminum at or less than about 660° C. for a duration of about 30 to about 60 seconds to form an ohmic contact.