Semiconductor light-emitting device and method for fabricating the same

摘要

A semiconductor light-emitting device is provided. The semiconductor light-emitting device may include a light-emitting structure, an electrode, an ohmic layer, an electrode layer, an adhesion layer, and a channel layer. The light-emitting structure may include a compound semiconductor layer. The electrode may be disposed on the light-emitting structure. The ohmic layer may be disposed under the light-emitting structure. The electrode layer may include a reflective metal under the ohmic layer. The adhesion layer may be disposed under the electrode layer. The channel layer may be disposed along a bottom edge of the light-emitting structure.

主权项

1. A light emitting device, comprising:
an adhesion layer; a light-emitting structure disposed on the adhesion layer, the light-emitting structure including a first conductive type semiconductor layer, a second conductive type semiconductor layer and an active layer disposed between the first conductive type semiconductor layer and the second conductive type semiconductor layer, the light-emitting structure having an inclined side surface such that an area of a bottom surface of the light-emitting structure is larger than an area of a top surface of the light-emitting structure; a first electrode including nickel, the first electrode disposed on the adhesion layer and disposed away from a side surface of the adhesion layer such that the first electrode is not beyond the bottom surface of the light-emitting structure; a channel layer disposed on the adhesion layer, the channel layer having a first portion disposed between the adhesion layer and the light-emitting structure; an insulating layer disposed from the channel layer to the top surface of the light-emitting structure through the inclined side surface of the light-emitting structure; a second electrode disposed on the light-emitting structure; a current blocking layer disposed between the adhesion layer and the light-emitting structure, the current blocking layer positioned corresponding to a position of the second electrode; and an electrode layer disposed between the first electrode and the adhesion layer, the electrode layer including nickel or platinum, a bottom surface of the electrode layer including a recess such that a central portion of the bottom surface of the electrode layer is closer to the first electrode than an edge portion of the bottom surface, the central portion of the bottom surface of the electrode layer being positioned corresponding to the current blocking layer; wherein the electrode layer comprises a flat bottom portion and at least two protrusions that protrude downwardly with respect to the second electrode on both sides of the flat bottom portion, wherein the adhesion layer comprises at least one protrusion that protrude upwardly with respect to the second electrode, and wherein at least one protrusion is disposed in the recess of the electrode layer; and wherein the adhesion layer further comprises at least two second protrusions that protrude upwardly with respect to the second electrode, wherein the recess of the electrode layer is disposed between the at least two protrusions of the electrode layer, and wherein the at least two protrusions of the electrode layer are disposed between the at least two second protrusions of the adhesion layer.