Nano-structure semiconductor light emitting device

摘要

A nano-structure semiconductor light emitting device includes a base layer formed of a first conductivity type semiconductor, and a first insulating layer disposed on the base layer and having a plurality of first openings exposing partial regions of the base layer. A plurality of nanocores is disposed in the exposed regions of the base layer and formed of the first conductivity-type semiconductor. An active layer is disposed on surfaces of the plurality of nanocores and positioned above the first insulating layer. A second insulating layer is disposed on the first insulating layer and has a plurality of second openings surrounding the plurality of nanocores and the active layer disposed on the surfaces of the plurality of nanocores. A second conductivity-type semiconductor layer is disposed on the surface of the active layer positioned to be above the second insulating layer.

主权项

1. A nano-structure semiconductor light emitting device comprising:
a base layer formed of a first conductivity type semiconductor; a first insulating layer disposed on the base layer and having a plurality of first openings exposing partial regions of the base layer; a plurality of nano-light emitting structures, each comprising a nanocore disposed in the exposed regions of the base layer and formed of the first conductivity-type semiconductor and a shell including an active layer and a second conductivity-type semiconductor layer sequentially disposed on a surface of the nanocore; and a second insulating layer disposed on the first insulating layer and having a plurality of second openings surrounding the nanocore and the active layer, wherein the second openings have a diameter greater than that of the first openings, and a portion of the first insulating layer in a perimeter of the first openings is exposed by the second openings; wherein the active layer is entirely positioned above the exposed portion of first insulating layer and the second conductivity-type semiconductor layer is entirely positioned above the second insulating layer.