Photon counting semiconductor detectors

摘要

A radiation detector (10) includes a semiconductor element (1) for generating positive holes and electrons, a cathode (2) formed on a first surface of the semiconductor element (1) and a plurality of segmented anodes (3) formed on a second surface of the semiconductor element (1), the second surface being in opposed relation to the first surface. Additionally, a plurality of segmented steering electrodes (5a) are positioned adjacent the plurality of segmented anodes (3). Moreover, a plurality of doping atoms are located above at least a portion of the plurality of segmented anodes (3) for reducing the voltage difference between the plurality of segmented anodes (3) and the plurality of segmented steering electrodes (5a).

主权项

1. An apparatus, comprising:
a pair of collecting electrodes in opposed relation to each other, wherein a first of the pair of electrodes is configured to receive X-ray photons; a voltage source across the pair of collecting electrodes; a semiconductor placed between the pair of collecting electrodes which creates one or more electron/hole pairs in response to an X-ray photon incident on the first of the pair of electrodes; a steering electrode positioned adjacent second of the pair of collecting electrodes and configured to steer electrons to the second of the pair of collecting electrodes; and a doped region of the semiconductor having a spatially modulated doping profile and located above at least a portion of the steering electrode and within the semiconductor, wherein the doped region is in a side of the semiconductor next to the steering electrode and the second of the pair of collecting electrodes, adjacent to the steering electrode, wherein the doped region generates an electric field that steers charge in the semiconductor towards the second of the pair of collecting electrodes.