Photoelectric converting apparatus

摘要

A photoelectric converting apparatus has first and third semiconductor layers of a first conductivity type which respectively output signals obtained by photoelectric conversion, and second and fourth semiconductor layers of a second conductivity type supplied with potentials from a potential supplying unit. In the photoelectric converting apparatus, the first, second, third and fourth semiconductor layers are arranged in sequence, the second and fourth semiconductor layers are electrically separated from each other, and the potential to be supplied to the second semiconductor layer and the potential to be supplied to the fourth semiconductor layer are controlled independently from each other.

主权项

1. A photoelectric converting apparatus comprising:
a first potential supplying unit to supply a first potential; a second potential supplying unit to supply a second potential, the value of the second potential being independent of the value of the first potential; a first current output terminal; a second current output terminal; a first semiconductor layer of a first conductivity type, connected to said first current output terminals, and configured to output a first signal obtained by photoelectric conversion; a second semiconductor layer of a second conductivity type opposite to said first conductivity type from which a current signal is not output, and configured to be supplied with a first potential from said first potential supplying unit and connected to said first potential supplying unit; a third semiconductor layer of said first conductivity type, connected to said second current output terminals, and configured to output a second signal obtained by photoelectric conversion; a fourth semiconductor layer of said second conductivity type from which a current signal is not output, and configured to be supplied with a second potential from said second potential supplying unit and connected to said second potential supplying unit; wherein said first semiconductor layer, said second semiconductor layer, said third semiconductor layer and said fourth semiconductor layer are arranged in sequence, wherein said second semiconductor layer and said fourth semiconductor layer are electrically separated from each other, and wherein the first potential to be supplied to said second semiconductor layer and the second potential to be supplied to said fourth semiconductor layer are to be controlled independently from each other.