| 发明名称 | Semiconductor device | ||
| 摘要 | The present invention concerns semiconductor devices comprising a source electrode, a drain electrode and a semiconducting layer consisting of a single or double 2-dimensional layer(s) made from one of the following materials: MoS2, MoSe2, WS2, WSe2, MoTe2 or WTe2. Replacing a stack by only one or two 2-dimensional layer(s) of MoS2, MoSe2, WS2, or WSe2, MoTe2 or WTe2 provides an enhanced electrostatic control, low power dissipation, direct band gap and tunability. | ||
| 申请公布号 | US9608101(B2) | 申请公布日期 | 2017.03.28 |
| 申请号 | US201213976757 | 申请日期 | 2012.01.04 |
| 申请人 | ECOLE POLYTECHNIQUE FEDERALE DE LAUSANNE (EPFL) | 发明人 | Kis Andras;Radisavljevic Branimir |
| 分类号 | H01L29/778;H01L29/66;H01L29/786 | 主分类号 | H01L29/778 |
| 代理机构 | Sheridan Ross P.C. | 代理人 | Sheridan Ross P.C. |
| 主权项 | 1. A semiconductor device comprising: a source electrode; a drain electrode; a semiconducting layer consisting of a single 2-dimensional layer made from one of the following materials: MoS2, MoSe2, WS2, WSe2, MoTe2 or WTe2; a gate electrode, wherein said gate electrode extends over said source electrode and said drain electrode; and a dielectric layer placed between said semiconducting layer and said gate electrode, wherein said dielectric layer is configured to form a protective layer on said semiconducting layer. | ||
| 地址 | CH | ||