| 发明名称 | Semiconductor device | ||
| 摘要 | A semiconductor device includes a first semiconductor layer formed over a substrate, a second semiconductor layer formed over the first semiconductor layer, a source electrode and a drain electrode formed over the second semiconductor layer, an insulating film formed over the second semiconductor layer, a gate electrode formed over the insulating film, and a protection film covering the insulating film, the protection film being formed by thermal CVD, thermal ALD, or vacuum vapor deposition. | ||
| 申请公布号 | US9608083(B2) | 申请公布日期 | 2017.03.28 |
| 申请号 | US201514735050 | 申请日期 | 2015.06.09 |
| 申请人 | FUJITSU LIMITED | 发明人 | Ozaki Shirou;Kanamura Masahito;Nakamura Norikazu;Miyajima Toyoo;Takeda Masayuki;Watanabe Keiji;Kikkawa Toshihide;Imanishi Kenji;Ohki Toshihiro;Imada Tadahiro |
| 分类号 | H01L29/51;H01L23/29;H01L29/20;H01L29/417;H01L29/423;H01L29/66;H01L29/778;H01L21/02 | 主分类号 | H01L29/51 |
| 代理机构 | Kratz, Quintos & Hanson, LLP | 代理人 | Kratz, Quintos & Hanson, LLP |
| 主权项 | 1. A semiconductor device comprising: a first semiconductor layer formed over a substrate; a second semiconductor layer formed over the first semiconductor layer; a source electrode and a drain electrode formed over the second semiconductor layer; an insulating film formed over the second semiconductor layer; a gate electrode formed over the insulating film; and a protection film covering the insulating film, the protection film including a same material as the insulating film, wherein the protection film is in contact with a top face and at least a part of a side face of the gate electrode, the protection film being an aluminum oxide film formed by thermal ALD, and wherein the protection film contains less hydroxyls than the insulating film does. | ||
| 地址 | Kawasaki JP | ||