发明名称 Semiconductor devices having insulating substrates and methods of formation thereof
摘要 In one embodiment, a method of forming a current sensor device includes forming a device region comprising a magnetic sensor within and/or over a semiconductor substrate. The device region is formed adjacent a front side of the semiconductor substrate. The back side of the semiconductor substrate is attached over an insulating substrate, where the back side is opposite the front side. Sidewalls of the semiconductor substrate are exposed by dicing the semiconductor substrate from the front side without completely dicing the insulating substrate. An isolation liner is formed over all of the exposed sidewalls of the semiconductor substrate. The isolation liner and the insulating substrate include a different material. The method further includes separating the insulating substrate to form diced chips, removing at least a portion of the isolation liner from over a top surface of the device region, and forming contacts over the top surface of the device region.
申请公布号 US9608201(B2) 申请公布日期 2017.03.28
申请号 US201615181733 申请日期 2016.06.14
申请人 Infineon Technologies AG 发明人 von Koblinski Carsten;Strutz Volker;Engelhardt Manfred
分类号 H01L23/31;H01L43/14;H01L21/78;H01L21/84;H01L27/12;H01L27/22;H01L43/06;H01L43/12;H01L23/00;H01L43/04 主分类号 H01L23/31
代理机构 Slater Matsil, LLP 代理人 Slater Matsil, LLP
主权项 1. A method of forming a current sensor device, the method comprising: forming a device region comprising a magnetic sensor within and/or over a semiconductor substrate, the device region being formed adjacent a front side of the semiconductor substrate comprising a back side and a front side, the back side being opposite the front side; attaching the front side of the semiconductor substrate over an insulating substrate; thinning the semiconductor substrate from the back side to expose a back surface; exposing sidewalls of the semiconductor substrate by dicing the semiconductor substrate from the back side without completely dicing the insulating substrate; forming an isolation liner over all of the exposed sidewalls of the semiconductor substrate and the back surface of the semiconductor substrate, wherein the isolation liner and the insulating substrate comprise a different material; forming a contact opening in the insulating substrate; forming a contact to the device region within the contact opening; and separating the insulating substrate to form diced chips.
地址 Neubiberg DE