发明名称 Thermoelectric conversion material, method for producing same, and thermoelectric conversion module
摘要 The invention provides a thermoelectric conversion material having a low thermal conductivity and an improved figure of merit and a production method for the material, and also provides a thermoelectric conversion module. The thermoelectric conversion material has, on a porous substrate having microscopic pores, a thermoelectric semiconductor layer formed of a thermoelectric semiconductor material, wherein the porous substrate has a polymer layer (B) on a plastic film (A) and the microscopic pores are formed in the polymer layer (B) and in a part of the plastic film (A). The production method for the thermoelectric conversion material comprises a substrate formation step of forming a porous substrate including a step 1, a step 2 and a step 3, and comprises a film formation step of forming a thermoelectric semiconductor layer through film formation of a thermoelectric semiconductor material on the porous substrate. The thermoelectric conversion module uses the thermoelectric conversion material.
申请公布号 US9608190(B2) 申请公布日期 2017.03.28
申请号 US201414770573 申请日期 2014.02.18
申请人 LINTEC CORPORATION;KYUSHU INSTITUTE OF TECHNOLOGY 发明人 Kato Kunihisa;Mutou Tsuyoshi;Miyazaki Koji;Harada Aiko
分类号 H01L35/02;H01L35/14;H01L35/20;H01L35/32;H01L35/18;H01L35/16;H01L35/24;H01L35/34 主分类号 H01L35/02
代理机构 Oblon, McClelland, Maier & Neustadt, L.L.P. 代理人 Oblon, McClelland, Maier & Neustadt, L.L.P.
主权项 1. A thermoelectric conversion material comprising, on a porous substrate comprising microscopic pores, a thermoelectric semiconductor layer formed of a thermoelectric semiconductor material, wherein the porous substrate has a polymer layer (B) on a plastic film (A) and the microscopic pores are formed in the polymer layer (B) and in a part of the plastic film (A), the thermoelectric semiconductor layer is present on top of the polymer layer (B) and on the inside bottom of the microscopic pores, and the thermoelectric semiconductor layer on the top of the polymer layer (B) is electrically insulated from the thermoelectric layer on the inside bottom of the microscopic pores.
地址 Itabashi-ku JP