BULEX contacts in advanced FDSOI techniques

摘要

The present disclosure provides, in accordance with some illustrative embodiments, a method of forming a semiconductor device, the method including providing an SOI substrate with an active semiconductor layer disposed on a buried insulating material layer, which is in turn formed on a base substrate material, forming a gate structure on the active semiconductor layer in an active region of the SOI substrate, partially exposing the base substrate for forming at least one bulk exposed region after the gate structure is formed, and forming a contact structure for contacting the at least one bulk exposed region.

主权项

1. A method of forming a semiconductor device, the method comprising:
providing a silicon-on-insulator (SOI) substrate with an active semiconductor layer disposed on a buried insulating material layer, which is in turn formed on a base substrate material; forming a gate structure above said active semiconductor layer in an active region of said SOI substrate; forming a first opening in said active semiconductor layer and said buried insulating layer to partially expose said base substrate for forming a first bulk exposed region after said gate structure is formed; and forming a contact structure in said first opening for contacting said first bulk exposed region.