| 发明名称 | Isolation structure for semiconductor device | ||
| 摘要 | A semiconductor structure includes a substrate, a semiconductor device in the substrate, and an isolating structure in the substrate and adjacent to the semiconductor device. The isolating structure has a roughness surface at a sidewall of the isolating structure, and the roughness surface includes carbon atoms thereon. | ||
| 申请公布号 | US9608060(B2) | 申请公布日期 | 2017.03.28 |
| 申请号 | US201414535110 | 申请日期 | 2014.11.06 |
| 申请人 | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. | 发明人 | Chou Yu-Chieh;Yang Tsai-Feng;Yang Chun-Yi;Huang Kun-Ming;Wang Shen-Ping;Chen Lieh-Chuan;Chu Po-Tao |
| 分类号 | H01L21/762;H01L29/735;H01L29/739;H01L29/06 | 主分类号 | H01L21/762 |
| 代理机构 | Maschoff Brennan | 代理人 | Maschoff Brennan |
| 主权项 | 1. A semiconductor structure, comprising: a substrate; a semiconductor device in the substrate; and an isolating structure in the substrate and adjacent to the semiconductor device, the isolating structure having a roughness surface at a sidewall of the isolating structure, wherein the roughness surface comprises carbon atoms thereon and has a roughness in a range from about 2.5 μm to about 10 μm. | ||
| 地址 | Hsinchu TW | ||