Semiconductor structure and fabrication method thereof, and static random access memory cell

摘要

A method for forming a semiconductor having a plurality of FinFETs. The method includes providing a semiconductor substrate having a surface; and forming a plurality of first fins and a plurality of second fins on the surface of the semiconductor substrate. Further, the method also includes forming a mask layer on top surfaces of the plurality of first fins and the plurality of second fins; and forming an insulation material layer covering side surfaces of the first fins, the second fins and the mask layer. Further, the method includes removing a portion of the mask layer on the first fins; and forming a continuous first gate structure covering side and top surfaces of a plurality of first fins and a discontinuous second gate structure covering only the side surfaces of the second fins and the side surfaces of the mask layer.

主权项

1. A method for fabricating a semiconductor structure having a plurality of FinFETs, comprising:
providing a semiconductor substrate having a surface; forming a plurality of first fins and a plurality of second fins on the surface of the semiconductor substrate; forming a mask layer on top surfaces of the plurality of first fins and the plurality of second fins; forming an insulation material layer covering side surfaces of the first fins, the second fins and the mask layer; removing a portion of the mask layer on the first fins; and forming a continuous first gate structure covering side and top surfaces of a plurality of first fins and a discontinuous second gate structure covering only the side surfaces of the second fins and the side surfaces of the mask layer.