Semiconductor device and fabrication method

摘要

Various embodiments provide semiconductor devices and fabrication methods. In an exemplary method, a dielectric layer can be formed on a semiconductor substrate. A plurality of pillar structures having a matrix arrangement can be formed on the dielectric layer. A plurality of sidewall spacers can be formed on the dielectric layer. Each sidewall spacer can be formed on a sidewall surface of one of the plurality of pillar structures. A distance between adjacent pillar structures in a same row or in a same column can be less than or equal to a double of a thickness of the each sidewall spacer on the sidewall surface. The plurality of pillar structures can be removed. The dielectric layer can be etched using the plurality of sidewall spacers as an etch mask to form a plurality of trenches or through holes in the dielectric layer.

主权项

1. A method for fabricating a semiconductor device, comprising:
providing a semiconductor substrate; forming a dielectric layer on the semiconductor substrate; forming a plurality of pillar structures having a matrix arrangement on the dielectric layer; forming a plurality of sidewall spacers on the dielectric layer, wherein each sidewall spacer of the plurality of sidewall spacers is formed on a sidewall surface of one of the plurality of pillar structures, and wherein a distance between two adjacent pillar structures in a same row or in a same column is less than or equal to a double of a thickness of the each sidewall spacer on the sidewall surface; forming a protective layer on the dielectric layer and outside an interconnect region containing the plurality of sidewall spacers, wherein the protective layer contacts and encloses the sidewall spacers of a subset of the plurality of pillar structures that are outermost pillar structures of the matrix arrangement; removing the plurality of pillar structures; and etching the dielectric layer using the plurality of sidewall spacers and the protective layer as an etch mask to form a plurality of trenches or through holes through the dielectric layer.