| 发明名称 | Method for establishing interconnects in packages using thin interposers | ||
| 摘要 | A method of interconnecting first and second semiconductor dies is provided. A splice interposer is attached to a top surface of a substrate through first pillars formed on a bottom surface of the splice interposer. The first semiconductor die is attached to the top surface of a substrate through second pillars formed on a bottom surface of the first semiconductor die. The first semiconductor die is attached to a top surface of the splice interposer through third pillars formed on the bottom surface of the first semiconductor. The second semiconductor die is attached to the top surface of the splice interposer through fourth pillars formed on a bottom surface of the second semiconductor die. The first to fourth plurality of pillars and the splice interposer form interconnection and wiring between the first semiconductor die, the second semiconductor die and the substrate. | ||
| 申请公布号 | US9607973(B1) | 申请公布日期 | 2017.03.28 |
| 申请号 | US201514946162 | 申请日期 | 2015.11.19 |
| 申请人 | GLOBALFOUNDRIES INC. | 发明人 | Fasano Benjamin V.;Cranmer Michael S.;Indyk Richard F.;Cox Harry;Sakuma Katsuyuki;Perfecto Eric D. |
| 分类号 | H01L21/44;H01L25/18;H01L25/00;H01L23/00;H01L23/538;H01L25/065 | 主分类号 | H01L21/44 |
| 代理机构 | Scully Scott Murphy and Presser | 代理人 | Scully Scott Murphy and Presser |
| 主权项 | 1. A method for interconnecting a first semiconductor die and a second semiconductor die, the method comprising: attaching a splice interposer to a top surface of a substrate through a first plurality of pillars formed on a bottom surface of the splice interposer; attaching the first semiconductor die to the top surface of a substrate through a second plurality of pillars formed on a bottom surface of the first semiconductor die; attaching the first semiconductor die to a top surface of the splice interposer through a third plurality of pillars formed on the bottom surface of the first semiconductor, wherein the height of the second plurality of pillars is greater than the height of the third plurality of pillars; and attaching the second semiconductor die to the top surface of the splice interposer through a fourth plurality of pillars formed on a bottom surface of the second semiconductor die; wherein the first to fourth plurality of pillars and the splice interposer form interconnection and wiring between the first semiconductor die, the second semiconductor die and the substrate. | ||
| 地址 | Grand Cayman KY | ||