| 发明名称 | Method for forming silicon oxide cap layer for solid state diffusion process | ||
| 摘要 | A method for protecting a doped silicate glass layer includes: forming a doped silicate glass layer on a substrate in a reaction chamber by plasma-enhanced atomic layer deposition (PEALD) using a first RF power; and forming a non-doped silicate glass layer having a thickness of less than 4 nm on the doped silicate glass layer in the reaction chamber, without breaking vacuum, by plasma-enhanced atomic layer deposition (PEALD) using a second RF power, wherein the second RF power is at least twice the first RF power. | ||
| 申请公布号 | US9607837(B1) | 申请公布日期 | 2017.03.28 |
| 申请号 | US201514977291 | 申请日期 | 2015.12.21 |
| 申请人 | ASM IP Holding B.V. | 发明人 | Namba Kunitoshi |
| 分类号 | H01L21/22;H01L21/225;H01L21/02 | 主分类号 | H01L21/22 |
| 代理机构 | Snell & Wilmer LLP | 代理人 | Snell & Wilmer LLP |
| 主权项 | 1. A method for protecting a doped silicate glass layer, comprising: forming a doped silicate glass layer on a substrate in a reaction chamber by plasma-enhanced atomic layer deposition (PEALD) using a first RF power; and forming a non-doped silicate glass layer having a thickness of less than 4 nm on the doped silicate glass layer in the reaction chamber, without breaking vacuum, by plasma-enhanced atomic layer deposition (PEALD) using a second RF power, wherein the second RF power is at least twice the first RF power. | ||
| 地址 | Almere NL | ||