发明名称 Reference voltage circuits and on-die termination circuits, methods for updating the same, and methods for tracking supply, temperature, and/or process variation
摘要 Devices and methods for operating devices are provided, such as those that include a memory device having a reference voltage (Vref) circuit that has substantially similar paths and impedances as an on-die termination (ODT) circuit. One such Vref circuit tracks supply variations and temperature changes in a manner substantially similar to the ODT circuit. In some embodiments an update scheme is provide for the ODT circuit and the Vref circuit to enable simultaneous update of each circuit through the same digital codes.
申请公布号 US9608630(B2) 申请公布日期 2017.03.28
申请号 US200912436683 申请日期 2009.05.06
申请人 Micron Technology, Inc. 发明人 Hollis Timothy M.
分类号 H03K17/16;H03K19/00;H03K19/003;H04L25/02 主分类号 H03K17/16
代理机构 Fletcher Yoder, P.C. 代理人 Fletcher Yoder, P.C.
主权项 1. A memory device, comprising: an on-die termination circuit (ODT); and a reference voltage circuit, wherein the reference voltage circuit tracks changes in supply voltage and temperature substantially the same as the on-die termination circuit to produce a variable reference voltage.
地址 Boise ID US