Semiconductor device and manufacturing method thereof

摘要

A semiconductor device includes metal wirings formed in a first interlayer dielectric layer disposed over a substrate, a first insulating layer covering portions of the metal wirings and the first interlayer dielectric layer, a second interlayer dielectric layer with air gaps disposed in a recess between adjacent two metal wirings, and a protective layer formed in a portion of an upper surface of the first interlayer dielectric layer, where the recess is not formed.

主权项

1. A method for manufacturing a semiconductor device, comprising:
forming a first interlayer dielectric layer over a substrate; forming first recesses in the first interlayer dielectric layer; forming metal wirings in the first recesses; forming a protective layer in a surface of the first interlayer dielectric layer between the metal wirings but not on upper surfaces of the metal wirings; forming a first insulating layer on the upper surfaces of the metal wirings and the protective layer; forming second recesses in the first interlayer dielectric layer between the metal wirings by partially etching the first insulating layer, the protective layer and the first interlayer dielectric layer; and forming a second interlayer dielectric layer so that air gaps are formed in the second recesses.