Patterning method using metal mask and method of fabricating semiconductor device including the same patterning method

摘要

A patterning method using a metal mask includes sequentially forming a lower metal layer and an upper metal layer on an etching object layer, forming an upper metal mask, forming the upper metal mask including patterning the upper metal layer, forming a lower metal mask, forming the lower metal mask including patterning the lower metal layer using the upper metal mask, and patterning the etching object layer using the upper metal mask.

主权项

1. A patterning method using a metal mask, the method comprising:
sequentially forming a lower metal layer, an upper metal layer, and a hard mask on an etching object layer; forming an upper metal mask, forming the upper metal mask including patterning the upper metal layer using the hard mask; forming a lower metal mask, forming the lower metal mask including patterning the lower metal layer using the upper metal mask; and patterning the etching object layer using the lower metal mask, wherein the forming of the lower metal mask includes: a first step of etching the lower metal layer using the upper metal mask; a second step of forming a passivation layer on the upper metal mask and the lower metal layer; and a third step etching the lower metal layer using the upper metal mask and the passivation layer.