发明名称 |
Etch process with pre-etch transient conditioning |
摘要 |
A method for etching features with different aspect ratios in an etch layer is provided. A plurality of cycles is provided wherein each cycle comprises a pre-etch transient conditioning of the etch layer, which provides a transient condition of the etch layer, wherein the transient condition has a duration and etching the etch layer for a duration, wherein the duration of the etching with respect to the duration of the transient condition is controlled to control etch aspect ratio dependence. |
申请公布号 |
US9607848(B2) |
申请公布日期 |
2017.03.28 |
申请号 |
US201615016123 |
申请日期 |
2016.02.04 |
申请人 |
Lam Research Corporation |
发明人 |
Lee Wonchul;Fu Qian;Drewery John S. |
分类号 |
H01L21/3065;H01L21/467;H01J37/32;H01L21/3213 |
主分类号 |
H01L21/3065 |
代理机构 |
Beyer Law Group LLP |
代理人 |
Beyer Law Group LLP |
主权项 |
1. A method for etching features with different aspect ratios in an etch layer, comprising:
a plurality of cycles, wherein each cycle comprises:
a pre-etch transient conditioning of the etch layer, which provides a transient condition of the etch layer, wherein the transient condition has a duration, wherein the pre-etch transient conditioning comprises
providing a pre-etch transient conditioning gas consisting essentially of He and O2; andforming the pre-etch transient conditioning gas into a plasma; andetching the etch layer for a duration, wherein the duration of the etching with respect to the duration of the transient condition is controlled to control etch aspect ratio dependence, wherein the etching follows the pre-etch transient conditioning, wherein the etching taking place within the duration of the transient condition provides a reverse aspect ratio dependent etch than etching past the duration of the transient condition. |
地址 |
Fremont CA US |