发明名称 Etch process with pre-etch transient conditioning
摘要 A method for etching features with different aspect ratios in an etch layer is provided. A plurality of cycles is provided wherein each cycle comprises a pre-etch transient conditioning of the etch layer, which provides a transient condition of the etch layer, wherein the transient condition has a duration and etching the etch layer for a duration, wherein the duration of the etching with respect to the duration of the transient condition is controlled to control etch aspect ratio dependence.
申请公布号 US9607848(B2) 申请公布日期 2017.03.28
申请号 US201615016123 申请日期 2016.02.04
申请人 Lam Research Corporation 发明人 Lee Wonchul;Fu Qian;Drewery John S.
分类号 H01L21/3065;H01L21/467;H01J37/32;H01L21/3213 主分类号 H01L21/3065
代理机构 Beyer Law Group LLP 代理人 Beyer Law Group LLP
主权项 1. A method for etching features with different aspect ratios in an etch layer, comprising: a plurality of cycles, wherein each cycle comprises: a pre-etch transient conditioning of the etch layer, which provides a transient condition of the etch layer, wherein the transient condition has a duration, wherein the pre-etch transient conditioning comprises providing a pre-etch transient conditioning gas consisting essentially of He and O2; andforming the pre-etch transient conditioning gas into a plasma; andetching the etch layer for a duration, wherein the duration of the etching with respect to the duration of the transient condition is controlled to control etch aspect ratio dependence, wherein the etching follows the pre-etch transient conditioning, wherein the etching taking place within the duration of the transient condition provides a reverse aspect ratio dependent etch than etching past the duration of the transient condition.
地址 Fremont CA US