发明名称 Memory system including semiconductor memory device and operating method thereof
摘要 An operating method of a memory system including first and second one half pages includes acquiring first and second partial data from main data; performing a first program operation to the first one half page of a selected page with the first partial data; and performing a second program operation to the second one half page of the selected page with the second partial data. The first and second partial data may be programmed in the same first column region in the first and second one half pages, respectively.
申请公布号 US9607699(B2) 申请公布日期 2017.03.28
申请号 US201614990272 申请日期 2016.01.07
申请人 SK Hynix Inc. 发明人 Kim Tae Hoon
分类号 G11C16/26;G11C16/10 主分类号 G11C16/26
代理机构 IP & T Group LLP 代理人 IP & T Group LLP
主权项 1. An operating method of a memory system including a plurality of pages each page including first one half page and a second one half page, the operating method comprising: acquiring first and second partial data from main data; performing a first program operation to the first one half page of a selected page with the first partial data; and performing a second program operation to the second one half page of the selected page with the second partial data; wherein the first and second partial data are programmed in the same first column region in the first and second one half pages, respectively, and wherein the first program operation and the second program operation are concurrently performed in response to a single program command.
地址 Gyeonggi-do KR