发明名称 Integrated circuit with precision current source
摘要 An integrated circuit with precision current source includes a first MOSFET, a second MOSFET, an op-amp and a resistor formed on a common semiconductor substrate. The first MOSFET is characterized by a first multiplier (×M1) and the second MOSFET is characterized by a second multiplier (×M2) where a ratio of ×M2 to ×M1 is greater than one. An inverting input of the op-amp is coupled to a drain of the first MOSFET and an output of the op-amp is coupled to a gate of the first MOSFET. A negative feedback circuit limits a rise in output current under low output voltage conditions.
申请公布号 US9608626(B1) 申请公布日期 2017.03.28
申请号 US201514862744 申请日期 2015.09.23
申请人 Maxim Integrated Products, Inc. 发明人 Tanase Gabriel E.
分类号 H03K17/687;H01L27/06;H01L27/092;H01L27/02;H05B33/08 主分类号 H03K17/687
代理机构 TIPS Group 代理人 TIPS Group
主权项 1. An integrated circuit with precision current source comprising: a first metal-oxide semiconductor field-effect transistor (MOSFET) formed on a semiconductor substrate and having a first source, a first drain, and a first gate, wherein the first MOSFET is characterized by a first multiplier (×M1); a second MOSFET formed on the semiconductor substrate and having a second source, a second drain, and a second gate, wherein the second MOSFET is characterized by a second multiplier (×M2), and wherein a ratio of ×M2 to ×M1 is greater than one; an operational amplifier (op-amp) formed on the semiconductor substrate having a plus input, a minus input and an output, wherein the output of the op-amp is coupled to the first gate; a first resistor coupling the first gate to the second gate; a first current source coupling the plus input of the op-amp to a positive voltage supply; a second current source coupling the gate of the second MOSFET to ground; and a negative feedback circuit coupled to the second gate to limit an output current flowing through the second MOSFET.
地址 San Jose CA US