Package including a plurality of stacked semiconductor devices including a capacitance enhanced through via and method of manufacture

摘要

A package can include a plurality of semiconductor devices stacked in a first direction and commonly sharing at least a first reference potential and a data signal; each semiconductor device including a first through via electrically connected to receive the first reference potential and a second through via electrically connected to receive the data signal, each first through via provides an electrical connection in the first direction between a first side and a second side opposite the first side of one of the plurality of semiconductor devices. A total first through via capacitance value is substantially greater than the total second through via capacitance value.

主权项

1. A package, comprising:
a plurality of semiconductor devices stacked in a first direction and commonly sharing at least a first reference potential and a data signal; each one of the plurality of semiconductor devices including a first through via electrically connected to receive the first reference potential and a second through via electrically connected to receive the data signal, each first through via provides an electrical connection in the first direction between a first side and a second side opposite the first side of one of the plurality of semiconductor devices;
each first through via on each one of the plurality of semiconductor devices has a total first through via capacitance value and each second through via on each one of the plurality of semiconductor devices has a total second through via capacitance value; wherein the total first through via capacitance value is substantially greater than the total second through via capacitance value.