发明名称 EVAPORATIVE DEPOSITION WITH IMPROVED DEPOSITION SOURCE
摘要 Disclosed is a deposition source for an evaporative deposition vacuum vessel and a method of evaporative deposition wherein a first receptacle is provided including a charge of a first material supported by the first receptacle. The first receptacle is heated to a temperature sufficient to evaporate the first material. The evaporated first material is caused to converge between the first receptacle and a substrate where the evaporated first material is deposited. A second receptacle can be provided that includes a charge of a second material supported by the second receptacle. The second receptacle can be heated to a temperature sufficient to evaporate the second material. The evaporated second material can also be caused to converge between the second receptacle and the substrate where the evaporated second material is deposited. While converging, the evaporated first and second materials can mix prior to being deposited on the substrate.
申请公布号 WO2017048696(A1) 申请公布日期 2017.03.23
申请号 WO2016US51478 申请日期 2016.09.13
申请人 ADVANTECH GLOBAL, LTD;BUCCI, Brian, Arthur 发明人 BUCCI, Brian, Arthur;DECKER, Wolfgang;HEYDEMANN, Volker D.
分类号 C23C14/34 主分类号 C23C14/34
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