发明名称 |
SEMI-METAL TUNNEL FIELD EFFECT TRANSISTOR |
摘要 |
A tunnel field effect transistor (100) comprises a source region (102), a drain region (104), and a channel region (106) formed of a single material, in particular a half-metal. The channel extends between the source region and the drain region. The channel region (106) and the drain region (104) are smaller than a threshold size in a first dimension. The threshold size is the size required for the material to exhibit sufficient quantum confinement such that a non-zero band gap results and the material becomes a semiconductor. The source region (102) is larger than this threshold size in the first dimension and is thus metallic. |
申请公布号 |
WO2017046024(A1) |
申请公布日期 |
2017.03.23 |
申请号 |
WO2016EP71409 |
申请日期 |
2016.09.12 |
申请人 |
UNIVERSITY COLLEGE CORK |
发明人 |
ANSARI, Lida;FAGAS, Giorgos;GREER, James |
分类号 |
H01L29/739;B82Y10/00;H01L29/06;H01L29/16;H01L29/26 |
主分类号 |
H01L29/739 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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