LIGHT-EMITTING DEVICE AND PRODUCTION METHOD THEREFOR

摘要

The light-emitting device of the present technique includes a substrate, a Group III nitride semiconductor layer disposed on the substrate, a current-blocking layer disposed on the Group III nitride semiconductor layer, a transparent conductive oxide film disposed on the Group III nitride semiconductor layer and the current-blocking layer, a dielectric film covering the Group III nitride semiconductor layer and at least a part of the transparent conductive oxide film, and a phosphor-containing resin coating disposed on the dielectric film. The Group III nitride semiconductor layer has a refractive index greater than that of the transparent conductive oxide film. The transparent conductive oxide film has a refractive index greater than that of the dielectric film. The dielectric film has a refractive index greater than that of the phosphor-containing resin coating. The current-blocking layer has a refractive index smaller than that of the phosphor-containing resin coating.

主权项

1. A light-emitting device, comprising:
a substrate, a Group III nitride semiconductor layer on the substrate, a current-blocking layer on the Group III nitride semiconductor layer, a transparent conductive oxide film on the Group III nitride semiconductor layer and the current-blocking layer, a first dielectric film covering at least a part of the Group III nitride semiconductor layer and at least a part of the transparent conductive oxide film, and a phosphor-containing resin coating on the first dielectric film, wherein the Group III nitride semiconductor layer has a refractive index greater than that of the transparent conductive oxide film; the transparent conductive oxide film has a refractive index greater than that of the first dielectric film; the first dielectric film has a refractive index greater than that of the phosphor-containing resin coating; and the current-blocking layer has a refractive index smaller than that of the phosphor-containing resin coating.