发明名称 |
SEMICONDUCTOR STRUCTURE AND THE MANUFACTURING METHOD THEREOF |
摘要 |
The present disclosure provides a FinFET. The FinFET includes a silicon-on-insulator (SOI) with an insulator; a plurality of fin structures on the insulator; an isolation on the insulator, and between two adjacent fin structures in the plurality of fin structures; and an oxide layer between each of the plurality of fin structures and the insulator, wherein the insulator comprises silicon germanium oxide. A method for manufacturing the FinFET includes forming a plurality of fin structures on a layer having a larger lattice constant than that of the fin structure by a patterning operation; oxidizing the fin structure and the layer to transform the layer into a first oxide layer; filling insulating material between adjacent fin structures; and etching the insulating material to expose a top surface and at least a portion of a sidewall of the fin structure. |
申请公布号 |
US2017084746(A1) |
申请公布日期 |
2017.03.23 |
申请号 |
US201615370841 |
申请日期 |
2016.12.06 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. |
发明人 |
LEE YI-JING;WU CHENG-HSIEN;KO CHIH-HSIN;WANN CLEMENT HSINGJEN |
分类号 |
H01L29/78;H01L29/06;H01L29/66;H01L21/02;H01L21/762 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
1. A method of manufacturing a FINFET, comprising:
forming a plurality of fin structures on a layer having a larger lattice constant than that of the fin structure by a patterning operation; oxidizing the fin structure and the layer to transform the layer into a first oxide layer; filling insulating material between adjacent fin structures; and etching the insulating material to expose a top surface and at least a portion of a sidewall of the fin structure. |
地址 |
HSINCHU TW |