| 发明名称 |
UNIFORM HEIGHT TALL FINS WITH VARYING SILICON GERMANIUM CONCENTRATIONS |
| 摘要 |
A method of making a semiconductor device includes forming a first fin in a first semiconducting material layer disposed over a substrate, the first semiconducting material layer comprising an element in a first concentration; and forming a second fin in a second semiconducting material layer disposed over the substrate and adjacent to the first semiconducting material layer, the second semiconducting material layer comprising the element in a second concentration; wherein the first concentration is different than the second concentration. |
| 申请公布号 |
US2017084501(A1) |
申请公布日期 |
2017.03.23 |
| 申请号 |
US201615291435 |
申请日期 |
2016.10.12 |
| 申请人 |
International Business Machines Corporation |
发明人 |
Bedell Stephen W.;Doris Bruce B.;Fogel Keith E.;Reznicek Alexander |
| 分类号 |
H01L21/84;H01L29/10;H01L21/762;H01L21/02 |
主分类号 |
H01L21/84 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method of making a semiconductor device, the method comprising:
forming a first fin in a first semiconducting material layer disposed over a substrate, the first semiconducting material layer comprising an element in a first concentration; and forming a second fin in a second semiconducting material layer disposed over the substrate and adjacent to the first semiconducting material layer, the second semiconducting material layer comprising the element in a second concentration; wherein the first concentration is different than the second concentration. |
| 地址 |
Armonk NY US |
