SEMICONDUCTOR DEVICE HAVING INTERCONNECT LAYER THAT INCLUDES DIELECTRIC SEGMENTS INTERLEAVED WITH METAL COMPONENTS

摘要

An interconnect layer is disposed over a substrate. The interconnect layer includes a plurality of dielectric segments interleaved with a plurality of metal components. A plurality of vias is disposed below, and electrically coupled to, a first group of the metal components. A plurality of dielectric components is disposed underneath a second group of the metal components. The dielectric components interleave with the vias. A conductive liner is disposed below a bottom surface and on sidewalk of the vias. A dielectric barrier layer is disposed below a bottom surface and on sidewalls of the dielectric segments. The dielectric barrier layer and the dielectric segments have different material compositions.

主权项

1. A semiconductor device, comprising:
an interconnect layer disposed over a substrate, wherein: the interconnect layer includes a plurality of dielectric segments and a plurality of metal components; a plurality of vias disposed below, and electrically coupled to, a first group of the metal components; a plurality of dielectric components disposed underneath a second group of the metal components; and a conductive liner disposed underneath the vias and between the vias and the dielectric components.