发明名称 High Temperature Spectrally Selective Thermal Emitter
摘要 The present invention enables elective emission from a heterogeneous metasurface that can survive repeated temperature cycling at high temperatures (e.g., greater than 1300 K). Simulations, fabrication and characterization were performed for an exemplary cross-over-a-backplane metasurface consisting of platinum and alumina layers on a sapphire substrate. The structure was stabilized for high temperature operation by an encapsulating alumina layer. The geometry was optimized for integration into a thermophotovoltaic (TPV) system and was designed to have its emissivity matched to the external quantum efficiency spectrum of 0.6 eV InGaAs TPV material. Spectral measurements of the metasurface resulted in a predicted 32% optical-to-electrical power conversion efficiency. The broadly adaptable selective emitter design can be easily scaled for integration with TPV systems.
申请公布号 US2017085212(A1) 申请公布日期 2017.03.23
申请号 US201514706271 申请日期 2015.05.07
申请人 Sandia Corporation ;Physical Sciences Inc. 发明人 Shaner Eric A.;Cederberg Jeffrey C.;Woolf David N.;Hensley Joel M.
分类号 H02S10/30;H01L31/0304;H01L31/0693 主分类号 H02S10/30
代理机构 代理人
主权项 1. A spectrally selective thermal emitter, comprising: an optically thick metallic backplane, a sub-wavelength dielectric layer deposited on the metallic backplane, and an array of metallic resonator elements having subwavelength periodicity deposited on the dielectric layer, wherein the metallic backplane, dielectric layer, and array of metallic resonator elements have similar coefficients of thermal expansion up to a high temperature and wherein the thermal emitter provides enhanced absorption of incident light at a resonance wavelength.
地址 Albuquerque NM US