| 发明名称 |
HIGH VOLTAGE TRANSISTOR |
| 摘要 |
High voltage devices and methods for forming a high voltage device are disclosed. The high voltage device includes a substrate prepared with a device isolation region. The device isolation region defines a device region. The device region includes at least first and second source/drain regions and a gate region defined thereon. A device well is disposed in the device region. The device well encompasses the at least first and second source/drain regions. A primary gate and at least one secondary gate adjacent to the primary gate are disposed in the gate region. The at least first and second source/drain regions are displaced from first and second sides of the primary gate. |
| 申请公布号 |
US2017084736(A1) |
申请公布日期 |
2017.03.23 |
| 申请号 |
US201514856574 |
申请日期 |
2015.09.17 |
| 申请人 |
GLOBALFOUNDRIES Singapore Pte. Ltd. |
发明人 |
TOH Eng Huat;LIU Xinfu;TAN Xueming Dexter |
| 分类号 |
H01L29/78;H01L29/06;H01L29/66;H01L29/51 |
主分类号 |
H01L29/78 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A high voltage device comprising:
a substrate prepared with a device isolation region, the device isolation region defines a device region, wherein the device region comprises at least first and second source/drain regions and a gate region defined thereon; a device well in the device region, the device well encompasses the at least first and second source/drain regions; and a primary gate and at least one secondary gate adjacent to the primary gate disposed in the gate region, wherein the at least first and second source/drain regions are displaced from first and second sides of the primary gate. |
| 地址 |
Singapore SG |
